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Postdoctoral Researcher Enabling Quantum-Computers Through Gate-stack Optimization of Qubits

 

Postdoctoral Researcher Enabling quantum-computers through gate-stack optimization of qubits

Research & development         ·      Leuven        ·      Full time

 

Understanding gate stack reliability at cryogenic temperatures to build better qubits

 

Solid-state qubits made from silicon or silicon-germanium quantum dots are promising candidates to realize large-scale quantum computers, which can solve problems that are far beyond the reach of classical computers. To overcome the inherent uncertainty of quantum operations even at mK temperatures, fault tolerant designs have been proposed where logical qubits are built from multiple physical qubits. Because each physical qubit requires multiple lines for control and read-out of the spin states, the integration of classical CMOS circuits and qubits at cryogenic temperatures is one of the key challenges to mitigate wiring constraints and ensure signal integrity to enable up-scaling of quantum computers. A good understanding of the trade-offs of power, performance, reliability, and variability at cryogenic temperatures is necessary to ensure stable operation in cryogenic environments. Furthermore, it has been shown that interface-disorder effects and charge noise are of fundamental importance for the decoherence times of spin qubits, creating additional interest in a deep understanding of charge trapping phenomena at ultra-low temperatures and its coupling to spin-states.

 

What you will do

  • You will play a key role in identifying possible technology trade-offs with respect to charge noise to enable fabrication of large numbers of spin-based qubits.
  • You will work closely with process integration engineers to improve qubit devices and circuits by optimizing different aspects of the gate stack and the semiconductor-oxide interfaces.
  • In-depth electrical characterization of MOS stacks will allow you to correlate key performance and reliability metrics of classical and quantum devices between room temperature and the mK-regime.
  • Your studies will help to explore the limits of traditional gate stack reliability models and improve our understanding of the physics of MOS stacks at cryogenic temperatures.

 

What we do for you

We offer you the opportunity to join one of the world’s premier research centers in nanotechnology at its headquarters in Leuven, Belgium. With your talent, passion and expertise, you’ll become part of a team that makes the impossible possible. Together, we shape the technology that will determine the society of tomorrow.

We are committed to being an inclusive employer and proud of our open, multicultural, and informal working environment with ample possibilities to take initiative and show responsibility. We commit to supporting and guiding you in this process; not only with words but also with tangible actions. Through imec.academy, ‘our corporate university’, we actively invest in your development to further your technical and personal growth. 

We are aware that your valuable contribution makes imec a top player in its field. Your energy and commitment are therefore appreciated by means of a competitive salary with many fringe benefits. 

 

Who you are

  • You have obtained a PhD or doctoral degree in electrical engineering, microelectronics, semiconductor device physics, material science or related fields
  • You have strong experience in electrical characterization of MOS devices
  • You have a solid background in script programming (Python, Matlab) or data-analysis in general.
  • You like taking initiative; you are persuasive and assured, while keeping a constructive attitude.
  • You are a communicative team player, yet you are able to work on your own.
  • You show the flexibility to adjust your scientific focus to the priorities in a rapidly evolving field of study
  • Given the international character of imec, a fluent knowledge of English is necessary.
  • The ideal candidate has in-depth knowledge in the field of charge trapping or noise in MOS transistors, electrical testing of semiconductor devices, and solid-state physics in general.

 

This postdoctoral position is funded by imec through KU Leuven. Because of the specific financing statute which targets international mobility for postdocs, only candidates who did not stay or work/study in Belgium for more than 24 months in the past 3 years can be considered for the position (short stays such as holiday, participation in conferences, etc. are not taken into account).

 

Please click here to apply.

 

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